Title :
HEMT amplifier for 30 GHz low noise receivers
Author :
Artal, Eduardo ; Corbella, Iqnasi
Author_Institution :
ETSI Telecom., Barcelona, Spain
Abstract :
Results on HEMT (high-electron-mobility transistor) microstrip low-noise amplifiers in the 3- GHz band are presented. The designed circuits were fabricated on 10 mil (0.254 mm) thick polytetrafluorethylene glass-fiber substrate (εr=2.17). The basic structure used in all matching networks is a pair of edge-coupled microstrip lines with two opposite ports open-circuited. No lumped DC-blocking capacitor is used. Results are presented on two amplifiers, both having input and output WR-28 interfaces. The first is a one-stage amplifier, and the waveguide-to-microstrip transition used in both ports consists of a ridge waveguide step transformer. The second has three stages and uses a microstrip E-probe transition to waveguide in both ports. The one-stage amplifier exhibits a noise figure lower than 4 dB and an associated gain greater than 5 dB at 30 GHz. The three-stage amplifier has a 5 dB noise figure and 15 dB gain at 27 GHz
Keywords :
high electron mobility transistors; microwave amplifiers; radio receivers; strip line components; 15 dB; 27 GHz; 30 GHz; 4 dB; 5 dB; HEMT amplifier; SHF; edge-coupled microstrip lines; gain; low noise receivers; matching networks; microstrip E-probe transition; noise figure; polytetrafluorethylene glass-fiber substrate; ridge waveguide step transformer; Capacitors; Circuit noise; Dielectric constant; Dielectric substrates; HEMTs; Low-noise amplifiers; Manufacturing; Microstrip; Probes; Scattering parameters;
Conference_Titel :
Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean
Conference_Location :
Lisbon
DOI :
10.1109/MELCON.1989.50049
