Ionizing Radiation Sensor by Using N2 Implanted MONOS Device

Author

Hsieh Wen Ching ; Shich Chuan Wu

Author_Institution

Dept. of Opto-Electron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2014

fDate

10-12 June 2014

Firstpage

1037

Lastpage

1040

Abstract

The N₂ implantation metal-oxide-nitride-oxide-silicon (hereafter N₂-MONOS) can be candidates for nonvolatile gamma radiation sensors. In the case of N₂-MONOS gamma radiation sensors, the gamma ray radiation induces a significant decrease of threshold voltage. The change of threshold voltage for N₂-MONOS after gamma irradiation has a strong correlation to the dose of gamma ray exposure as well. The N₂-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile ionizing radiation sensing in the future.

Keywords

MOS capacitors; elemental semiconductors; gamma-ray detection; ion implantation; nitrogen; semiconductor doping; silicon; silicon compounds; N₂; N₂ implantation; N₂-MONOS capacitor device; SiO₂-Si₃N₄-SiO₂-Si; ionizing radiation sensor; metal-oxide-nitride-oxide-silicon device; nonvolatile gamma radiation sensors; threshold voltage; Capacitors; Electron traps; Logic gates; MONOS devices; Radiation effects; Threshold voltage; Gamma; MONOS; N2; Nonvolatile; Sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer, Consumer and Control (IS3C), 2014 International Symposium on

Conference_Location

Taichung

Type

conf

DOI

10.1109/IS3C.2014.271

Filename

6846063