Title :
A monolithic double balanced mixer using passive GaAs MESFETs
Author_Institution :
Telecommun. Lab., Tech. Res. Centre of Finland, Espoo, Finland
Abstract :
A monolithic double balanced mixer has been realized using 1-μm GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; mixers (circuits); 1 micron; GaAs technology; III-V semiconductor; MESFET; channel resistance; conversion loss; high compression point; input third-order intercept point; linear region; low intermodulation distortion; monolithic double balanced mixer; Diodes; Electrical resistance measurement; FETs; Gallium arsenide; Knee; Linearity; MESFETs; Mixers; Radio frequency; Switches;
Conference_Titel :
Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean
Conference_Location :
Lisbon
DOI :
10.1109/MELCON.1989.50050
