Title :
A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications
Author :
Geunyong Lee ; Jonghun Jung ; Jong-In Song
Author_Institution :
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching network. The matching networks were designed to have a reduced insertion loss and size. The PA is fabricated using 0.35μm SiGe BiCMOS technology with a low inductance through-silicon-via (TSV). The PA a gain of 28.5dB, a PAE of 26.6%, an EVM of 2.8%, and an ACLR1 of -32.5 dBc at the output power of 26 dBm for 10MHz BW 16 QAM LTE signals.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; Long Term Evolution; mobile radio; power amplifiers; quadrature amplitude modulation; three-dimensional integrated circuits; 2-stage cascade structure; ACLR1; BiCMOS technology; HBT power amplifier; PA; SiGe; TSV; low inductance through-silicon-via; matching networks; mobile 16 QAM LTE application; mobile Long Term Evolution application; output power power amplifier; size 0.35 mum; Heterojunction bipolar transistors; Impedance matching; Long Term Evolution; Mobile communication; Power amplifiers; Power generation; Silicon germanium; SiGe HBT; mobile LTE applications; power amplifier;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-2929-3
Electronic_ISBN :
2164-2958
DOI :
10.1109/RWS.2013.6486698
