• DocumentCode
    1683417
  • Title

    IR detection in wide-gap semiconductors using extreme nondegenerate two-photon absorption

  • Author

    Pattanaik, Himansu S. ; Fishman, Dmitry A. ; Webster, Scott ; Hagan, David J. ; Van Stryland, Eric W.

  • Author_Institution
    Coll. of Opt. & Photonics: CREOL & FPCE, Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We compare GaAs and GaN for IR detection using extremely non-degenerate two-photon absorption. While the small gap material has larger ND-2PA and hence better sensitivity to IR, unwanted background from degenerate 2PA outweighs this advantage.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; infrared detectors; two-photon processes; wide band gap semiconductors; GaAs; GaN; IR detection; extreme nondegenerate two-photon absorption; small gap material; wide-gap semiconductors; Absorption; Detectors; Gallium arsenide; Gallium nitride; Logic gates; Photonic band gap; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1683417