Title :
IR detection in wide-gap semiconductors using extreme nondegenerate two-photon absorption
Author :
Pattanaik, Himansu S. ; Fishman, Dmitry A. ; Webster, Scott ; Hagan, David J. ; Van Stryland, Eric W.
Author_Institution :
Coll. of Opt. & Photonics: CREOL & FPCE, Univ. of Central Florida, Orlando, FL, USA
Abstract :
We compare GaAs and GaN for IR detection using extremely non-degenerate two-photon absorption. While the small gap material has larger ND-2PA and hence better sensitivity to IR, unwanted background from degenerate 2PA outweighs this advantage.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; infrared detectors; two-photon processes; wide band gap semiconductors; GaAs; GaN; IR detection; extreme nondegenerate two-photon absorption; small gap material; wide-gap semiconductors; Absorption; Detectors; Gallium arsenide; Gallium nitride; Logic gates; Photonic band gap; Photonics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
