Title :
Class-E power amplifier design at 2.5 GHz using a packaged transistor
Author :
Collins, Gayle Fran ; Wood, Jo
Author_Institution :
MaXentric Technol., La Jolla, CA, USA
Abstract :
A Class-E power amplifier has been designed to operate at 2.5 GHz using a commercial, packaged GaAs pHEMT. The design approach used a novel analysis of the package impedances. The objective was to present optimal harmonic loads to the transistor, using lumped-component matching on commercial PCB material. Using an MRFG35010 plastic packaged transistor, a drain efficiency of 72% with about 3 W output power was achieved at 2.55 GHz.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave transistors; power amplifiers; printed circuits; semiconductor device packaging; GaAs; MRFG35010 plastic packaged transistor; class-e power amplifier design; commercial PCB material; drain efficiency; frequency 2.55 GHz; lumped-component matching; optimal harmonic loads; package impedances; packaged pHEMT; packaged transistor; Capacitance; Gallium arsenide; Harmonic analysis; Power amplifiers; Resonant frequency; Switches; Transistors; Class-E; Power amplifier; high efficiency; switching amplifier;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-2929-3
Electronic_ISBN :
2164-2958
DOI :
10.1109/RWS.2013.6486707
