DocumentCode :
1683712
Title :
MESFET drain mixers: analysis and design
Author :
Rosário, M. Joáo ; Vitor, Pedro R B ; Freire, J Costa
Author_Institution :
Departamento de Engenharia, Electrotecnica e Computadores, IST, Lisbon, Portugal
fYear :
1989
Firstpage :
343
Lastpage :
346
Abstract :
A general and efficient nonlinear/linear analysis technique for MESFET drain mixers is presented. The study of conversion gain and matching impedances of the mixer is based on the Z-parameter conversion matrix. Using the approach, all the nonlinearities in the FET large-signal equivalent circuit can be included and any number of local oscillator (LO) harmonics and mixing products can be considered. LO level and DC bias conditions for maximum gain are predicted. The proposed program set, MIXAN (mixer analysis), is based on the output results of SPICE transient analysis. This tool was used for the design and optimization of X-band drain mixers. An example is presented for which the experimental and simulated results are in close agreement
Keywords :
Schottky gate field effect transistors; circuit CAD; circuit analysis computing; linear network analysis; mixers (circuits); nonlinear network analysis; DC bias conditions; MESFET drain mixers; MIXAN; SPICE transient analysis; X-band drain mixers; Z-parameter conversion matrix; conversion gain; design; large-signal equivalent circuit; linear analysis; local oscillator harmonics; matching impedances; maximum gain; mixer analysis; mixing products; nonlinear analysis; optimization; program; FETs; Impedance; Jacobian matrices; Local oscillators; MESFETs; Radio frequency; Schottky diodes; Topology; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean
Conference_Location :
Lisbon
Type :
conf
DOI :
10.1109/MELCON.1989.50052
Filename :
50052
Link To Document :
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