Title :
Depth Distribution Of Nitrogen In Silicon From Plasma Ion Implantation
Author :
Vajo, J.J. ; Williams, John D. ; Ronghua Wei ; Wilson, Roland ; Matossian, J.N.
Author_Institution :
Hughes Research Laboratories
Keywords :
Electrons; Ion beams; Ion implantation; Laboratories; Nitrogen; Particle beams; Plasma immersion ion implantation; Silicon; Spectroscopy; Voltage;
Conference_Titel :
Plasma Science, 1994. Conference Record - Abstracts., 1994 IEEE International Conference on
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-2006-9
DOI :
10.1109/PLASMA.1994.588736
