DocumentCode

1683747

Title

Depth Distribution Of Nitrogen In Silicon From Plasma Ion Implantation

Author

Vajo, J.J. ; Williams, John D. ; Ronghua Wei ; Wilson, Roland ; Matossian, J.N.

Author_Institution

Hughes Research Laboratories

fYear

1994

Firstpage

93

Lastpage

93

Keywords

Electrons; Ion beams; Ion implantation; Laboratories; Nitrogen; Particle beams; Plasma immersion ion implantation; Silicon; Spectroscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1994. Conference Record - Abstracts., 1994 IEEE International Conference on

Conference_Location

Santa Fe, NM, USA

ISSN

0730-9244

Print_ISBN

0-7803-2006-9

Type

conf

DOI

10.1109/PLASMA.1994.588736

Filename

588736