DocumentCode
16839
Title
InGaN-LD-Pumped Continuous-Wave Deep Red Laser at 670 nm in Pr3+:LiYF4 Crystal
Author
Biao Qu ; Bin Xu ; Saiyu Luo ; Yongjie Cheng ; Huiying Xu ; Zhiping Cai ; Camy, P. ; Doualan, J.-L. ; Moncorge, R.
Author_Institution
Dept. of Electron. Eng., Xiamen Univ., Xiamen, China
Volume
27
Issue
4
fYear
2015
fDate
Feb.15, 15 2015
Firstpage
333
Lastpage
335
Abstract
We report the first laser operation at π-polarized 670.34-nm deep red laser in a 2-W InGaN-LD-pumped Pr3+:LiYF4 (Pr:YLF) crystal with the aid of a 0.1-mm intracavity etalon, to the best of our knowledge. The maximum output power of this laser emission was up to 87.6 mW with slope efficiency of ~11.9$ % with respect to the absorbed pump power. The beam propagation factors in x-direction and y-direction were measured to be 1.49 and 1.05, respectively.
Keywords
III-V semiconductors; indium compounds; laser beams; light interferometers; lithium compounds; optical pumping; praseodymium; solid lasers; π-polarized deep red laser; InGaN; InGaN-LD-pumped Pr3+:LiYF4 crystal; InGaN-LD-pumped continuous-wave deep red laser; LiYF4:Pr3+; absorbed pump power; beam propagation factors; intracavity etalon; laser emission; laser operation; maximum output power; power 2 W; power 87.6 mW; size 0.1 mm; slope efficiency; wavelength 670.34 nm; x-direction; y-direction; Crystals; Laser beams; Laser excitation; Measurement by laser beam; Pump lasers; Semiconductor lasers; Diode pumped; Pr3+:LiYF4 crystal; deep red laser; pr3+:LiYF4 crystal;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2014.2365577
Filename
6939632
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