DocumentCode
1684017
Title
Single-event effects in advanced CMOS technologies — Analysis and mitigation
Author
Turowski, Marek ; Lilja, Klas
Author_Institution
Robust Chip Inc. (RCI) Pleasanton, California, USA
fYear
2015
Firstpage
33
Lastpage
33
Abstract
New generations of electronic devices have become more sensitive to the effects of the natural radiation coming from the surrounding environment. These radiation sources are cosmic rays and radioactive impurities, able to corrupt the content of memory cells or to induce transient pulses in combinational logic. The growing sensitivity is due to the lower charge needed to define the logic levels in nano-scale semiconductor technologies and the increasing number of components inside the modern integrated circuits. We discuss the sources and mechanisms of single event effects (SEE) and advanced techniques to simulate, analyze, and mitigate these effects, including redundancy and layout-based radiation-hardening-by-design (RHBD).
Keywords
cross-section; error rate; prediction; radiation effects; radiation-hardening; single-event upsets (SEU); soft errors;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location
Torun, Poland
Print_ISBN
978-8-3635-7806-0
Type
conf
DOI
10.1109/MIXDES.2015.7208475
Filename
7208475
Link To Document