• DocumentCode
    1684017
  • Title

    Single-event effects in advanced CMOS technologies — Analysis and mitigation

  • Author

    Turowski, Marek ; Lilja, Klas

  • Author_Institution
    Robust Chip Inc. (RCI) Pleasanton, California, USA
  • fYear
    2015
  • Firstpage
    33
  • Lastpage
    33
  • Abstract
    New generations of electronic devices have become more sensitive to the effects of the natural radiation coming from the surrounding environment. These radiation sources are cosmic rays and radioactive impurities, able to corrupt the content of memory cells or to induce transient pulses in combinational logic. The growing sensitivity is due to the lower charge needed to define the logic levels in nano-scale semiconductor technologies and the increasing number of components inside the modern integrated circuits. We discuss the sources and mechanisms of single event effects (SEE) and advanced techniques to simulate, analyze, and mitigate these effects, including redundancy and layout-based radiation-hardening-by-design (RHBD).
  • Keywords
    cross-section; error rate; prediction; radiation effects; radiation-hardening; single-event upsets (SEU); soft errors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
  • Conference_Location
    Torun, Poland
  • Print_ISBN
    978-8-3635-7806-0
  • Type

    conf

  • DOI
    10.1109/MIXDES.2015.7208475
  • Filename
    7208475