Title :
A 4-bit SiGe passive phase shifter for X-band phased arrays
Author :
Kalyoncu, I. ; Ozeren, Emre ; Kaynak, Mehmet ; Gurbuz, Yasar
Author_Institution :
Fac. of Eng. & Natural Sci. -FENS, Sabanci Univ., Istanbul, Turkey
Abstract :
This paper presents a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. All bits are digitally controlled. The 22.5° and 45° bits are based on switched low-pass network while the 90° and 180° bits are based on switching between high-pass/low-pass filters. Filters are implemented using on-chip spiral inductors and high-Q MIM capacitors. Switching functionality is obtained by isolated NMOS transistors employing resistive body floating technique. All bits are optimized to minimize the RMS phase error. Ordering of bits is optimized so as to minimize the overall insertion loss. Simulated insertion loss is 12±2 dB and RMS phase error is less than 2° over X-band frequencies.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; MIM devices; MOSFET; capacitors; digital control; high-pass filters; inductors; low-pass filters; microwave phase shifters; NMOS transistors; RMS phase error; SiGe; SiGe BiCMOS process; SiGe passive phase shifter; X-band frequency; X-band phased arrays; digitally control bits; frequency 8 GHz to 12 GHz; high pass-low pass filters; high-Q MIM capacitor; insertion loss; onchip spiral inductor; resistive body floating technique; size 0.25 mum; storage capacity 4 bit; switched low-pass network; BiCMOS integrated circuits; Frequency measurement; Insertion loss; Loss measurement; Phase measurement; Phase shifters; Silicon germanium; Phase shifter; SiGe BiCMOS; T/R module; X-band; phased array;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-2929-3
Electronic_ISBN :
2164-2958
DOI :
10.1109/RWS.2013.6486724
