DocumentCode :
1684948
Title :
1.4ps superradiant pulses from a GaN-based laser
Author :
Olle, V.F. ; Vasil´ev, P.P. ; Wonfor, A. ; Penty, R.V. ; White, I.H.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
The generation of picosecond superradiant pulses from 408nm a GaN/InGaN laser diode is demonstrated for the first time. Pulses with peak powers above 2.8W, pulse energy of 57pJ and durations of 1.4ps are generated.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pulse generation; semiconductor lasers; wide band gap semiconductors; GaN-InGaN; energy 57 pJ; laser diode; picosecond superradiant pulses generation; time 1.4 ps; wavelength 408 nm; Diode lasers; Jitter; Optical fibers; Optical pulses; Optical switches; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326849
Link To Document :
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