• DocumentCode
    1685032
  • Title

    Electrically injected polariton lasing from a GaAs-based microcavity under magnetic field

  • Author

    Bhattacharya, P. ; Das, A. ; Jankowski, M. ; Bhowmick, S. ; Lee, C.S. ; Jahangir, S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; magnetic field effects; microcavity lasers; polaritons; semiconductor lasers; GaAs; electrically injected polariton lasing; magnetic field; magnetic flux density 7 T; microcavity lasers; relaxation bottleneck suppression; threshold injection current density; Excitons; Laser excitation; Magnetic field measurement; Magnetic fields; Microcavities; Pump lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1685032