Title :
Electrically injected polariton lasing from a GaAs-based microcavity under magnetic field
Author :
Bhattacharya, P. ; Das, A. ; Jankowski, M. ; Bhowmick, S. ; Lee, C.S. ; Jahangir, S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.
Keywords :
III-V semiconductors; current density; gallium arsenide; magnetic field effects; microcavity lasers; polaritons; semiconductor lasers; GaAs; electrically injected polariton lasing; magnetic field; magnetic flux density 7 T; microcavity lasers; relaxation bottleneck suppression; threshold injection current density; Excitons; Laser excitation; Magnetic field measurement; Magnetic fields; Microcavities; Pump lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
