DocumentCode
1685073
Title
Evidence of non-vanishing excitonic correlation near the exciton Mott transition in Si revealed by THz time domain spectroscopy
Author
Suzuki, Takeshi ; Shimano, Ryo
Author_Institution
Dept. of Phys., Univ. of Tokyo, Tokyo, Japan
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We investigate the Coulomb correlation in electron-and-hole system in Si using optical-pump-terahertz-probe spectroscopy. Excitonic correlation is observed even above the Mott density accompanied by coupled behavior of plasmon and exciton.
Keywords
elemental semiconductors; excitons; metal-insulator transition; plasmons; silicon; terahertz wave spectra; time-domain analysis; Coulomb correlation; Mott density; Si; THz time domain spectroscopy; electron-hole system; exciton Mott transition; nonvanishing excitonic correlation; optical-pump-terahertz-probe spectroscopy; plasmon; Correlation; Excitons; Optical amplifiers; Optical pulses; Optical pumping; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326853
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