Title :
Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs
Author :
Farokhnejad, Atieh ; Graef, Michael ; Kloes, Alexander
Author_Institution :
Competence Centre for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
Abstract :
Recently, the Tunnel-FET is gaining interest due to its possibility to overcome the 60 mV/dec subthreshold slope limitation of the standard MOSFET. Due to its band-to-band (B2B) tunneling-based current transport mechanism, the requirements for sufficient tunneling models are raising. By taking into account various barrier shapes, tunneling distances and energy levels, the wavelet-based calculation of the transmission coefficient offers the possibility to calculate tunneling events as B2B tunneling at the junctions and gate leakage current in an accurate way. A comparison of the wavelet solution with the exact solution of the Schrödinger equation for rectangular barriers and the Wentzel-Kramers-Brillouin (WKB) approximation for triangular shaped barriers is presented in this paper.
Keywords :
MOSFET; field effect transistors; semiconductor device models; wavelet transforms; MOSFET; Schrodinger equation; Wentzel-Kramers-Brillouin approximation; band-to-band tunneling-based current transport mechanism; gate leakage current; rectangular barriers; transmission coefficient; tunnel-FET; tunneling events; tunneling models; wavelet-based calculation; Approximation methods; Electric fields; Mathematical model; Potential energy; Shape; Tunneling; Wave functions; Analytical Modeling; Gate leakage; Tunnel-FET; Wavelet transformation; band-to-band (B2B) tunneling; trap-assisted-tunneling (TAT);
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location :
Torun
Print_ISBN :
978-8-3635-7806-0
DOI :
10.1109/MIXDES.2015.7208512
