DocumentCode
1685121
Title
Channel charge model of a dual-gate junctionless transistor
Author
Kasprowicz, Dominik
Author_Institution
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
fYear
2015
Firstpage
216
Lastpage
221
Abstract
This paper presents a semi-empirical model of the mobile charge in the channel of a junctionless dual-gate MOSFET. Its accuracy has been demonstrated to be better than 1% of the total depletion charge for a wide range of channel thickness and substrate doping values.
Keywords
MOSFET; carrier mobility; semiconductor device models; channel charge model; channel thickness; dual gate junctionless transistor; junctionless dual gate MOSFET; mobile charge; semiempirical model; substrate doping; total depletion charge; Accuracy; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Silicon; JL transistor; accumulation-mode transistor; dual-gate MOSFET; junctionless transistor; model;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location
Torun
Print_ISBN
978-8-3635-7806-0
Type
conf
DOI
10.1109/MIXDES.2015.7208513
Filename
7208513
Link To Document