Title :
Channel charge model of a dual-gate junctionless transistor
Author :
Kasprowicz, Dominik
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
This paper presents a semi-empirical model of the mobile charge in the channel of a junctionless dual-gate MOSFET. Its accuracy has been demonstrated to be better than 1% of the total depletion charge for a wide range of channel thickness and substrate doping values.
Keywords :
MOSFET; carrier mobility; semiconductor device models; channel charge model; channel thickness; dual gate junctionless transistor; junctionless dual gate MOSFET; mobile charge; semiempirical model; substrate doping; total depletion charge; Accuracy; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Silicon; JL transistor; accumulation-mode transistor; dual-gate MOSFET; junctionless transistor; model;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location :
Torun
Print_ISBN :
978-8-3635-7806-0
DOI :
10.1109/MIXDES.2015.7208513
