Simple methods of threshold voltage parameter extraction for MOSFET models

Two simple non-iterative methods of MOSFET threshold voltage parameter extraction are presented. They are valid for threshold voltage-based and charge-based compact models of MOS transistors. The methods take advantage of the features of the model formulae and their derivatives. The methods have been illustrated using both real measurements and data obtained via simulation of simple circuits used for extraction of the pinch-off voltage of the MOSFET EKV model. The simulations have been done using an open-source program Qucs.