Deep p-well pixel technology for CMOS back illuminated image sensors

Author

David, Y. ; Efron, U.

Author_Institution

Dept. of Electrical Engineering, Holon Institute of Technology, Holon, Israel. e-male: isak@hit.ac.il

fYear

2006

Firstpage

67

Lastpage

70

Abstract

A new technological solution for backside illuminated CMOS imagers is proposed. The pixel area consists of an n-well/substrate photo diode and a deep p-well, which contains the APS pixel circuitry as well as additional application specific circuits. This structure was analyzed using Silvaco´s ATLAS device simulator. Simulation results show that this structure provides low cross-talk, high photo response and effectively shields the pixel circuitry from the photo charges generated in the substrate. The deep p-well pixel technology allows increasing the thickness of the die up to 30 micrometers, thus improving its mechanical ruggedness following the thinning process. Such deep p-well imager structure will also be integrated into the Image Transceiver Device, which combines a front side LCOS micro display with a back-illuminated imager.

Keywords

Analytical models; CMOS image sensors; CMOS technology; Circuit simulation; Diodes; Image sensors; Integrated circuit technology; Liquid crystal on silicon; Pixel; Transceivers; APS; CMOS image sensor; Image transceiver; back-illuminated; crosstalk; deep p-well; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 2006 IEEE 24th Convention of

Conference_Location

Eilat, Israel

Print_ISBN

1-4244-0229-8

Electronic_ISBN

1-4244-0230-1

Type

conf

DOI

10.1109/EEEI.2006.321084

Filename

4115247