Physics-based modeling of NPT and PT IGBTs at deep cryogenic temperatures

Author

Caiafa, A. ; Snezhko, A. ; Hudgins, J.L. ; Santi, E. ; Prozorov, R. ; Palmer, P.R.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

4

fYear

2004

Firstpage

2536

Abstract

Detailed experimental data taken for punch-through (PT) and nonpunch-through (NPT) insulated gate bipolar transistors (IGBTs) are presented. The test program covered IGBT devices rated for 100-600 A and 600-1200 V from different manufacturers. The turn off behavior of the IGBTs is examined over a temperature range of 4.2 to 295 K. Physical behavior at low junction temperatures is analyzed. The IGBTs are consequently modeled using the Palmer-Leturcq model, a physics-based model based on the Fourier expansion of the ambipolar diffusion equation.

Keywords

Fourier analysis; cryogenic electronics; insulated gate bipolar transistors; semiconductor device models; semiconductor device testing; 100 to 600 A; 4.2 to 295 K; 600 to 1200 V; Fourier expansion; Palmer-Leturcq model; ambipolar diffusion equation; cryogenic temperatures; insulated gate bipolar transistors; nonpunch-through IGBT; physics-based modeling; punch-through IGBT; test program; turn off behavior; Circuits; Cryogenics; Dielectric liquids; Insulated gate bipolar transistors; Power electronics; Superconducting cables; Superconducting magnetic energy storage; Temperature distribution; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE

ISSN

0197-2618

Print_ISBN

0-7803-8486-5

Type

conf

DOI

10.1109/IAS.2004.1348831

Filename

1348831