DocumentCode
1685643
Title
Design of building blocks of an X-band silicon integrated transceiver for FMCW radar
Author
Piesiewicz, Radoslaw
Author_Institution
SIRC Sp. z o.o., Gdynia, Poland
fYear
2015
Firstpage
309
Lastpage
313
Abstract
In this paper design of critical building blocks of a 10 GHz silicon integrated circuit of an FMCW radar transceiver is reported. Specifically, design of VCO and LNA is discussed. The targeted transceiver structure will be world´s first, commercially available silicon integrated circuit built in SiGe BiCMOS technology and dedicated for low-power radar applications.
Keywords
BiCMOS integrated circuits; CW radar; FM radar; elemental semiconductors; low noise amplifiers; microwave amplifiers; microwave oscillators; radio transceivers; silicon; silicon compounds; voltage-controlled oscillators; FMCW radar transceiver; LNA design; Si; SiGe; SiGe BiCMOS technology; VCO design; X-band silicon integrated circuit transceiver building block design; frequency 10 GHz; frequency modulation continuous wave radar; low-noise amplifier; low-power radar applications; Gain; MMICs; Radar applications; Silicon; Transceivers; Voltage-controlled oscillators; FMCW radar; LNA; SiGe BiCMOS; VCO; integrated transceiver;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location
Torun
Print_ISBN
978-8-3635-7806-0
Type
conf
DOI
10.1109/MIXDES.2015.7208533
Filename
7208533
Link To Document