Title :
Design of building blocks of an X-band silicon integrated transceiver for FMCW radar
Author :
Piesiewicz, Radoslaw
Author_Institution :
SIRC Sp. z o.o., Gdynia, Poland
Abstract :
In this paper design of critical building blocks of a 10 GHz silicon integrated circuit of an FMCW radar transceiver is reported. Specifically, design of VCO and LNA is discussed. The targeted transceiver structure will be world´s first, commercially available silicon integrated circuit built in SiGe BiCMOS technology and dedicated for low-power radar applications.
Keywords :
BiCMOS integrated circuits; CW radar; FM radar; elemental semiconductors; low noise amplifiers; microwave amplifiers; microwave oscillators; radio transceivers; silicon; silicon compounds; voltage-controlled oscillators; FMCW radar transceiver; LNA design; Si; SiGe; SiGe BiCMOS technology; VCO design; X-band silicon integrated circuit transceiver building block design; frequency 10 GHz; frequency modulation continuous wave radar; low-noise amplifier; low-power radar applications; Gain; MMICs; Radar applications; Silicon; Transceivers; Voltage-controlled oscillators; FMCW radar; LNA; SiGe BiCMOS; VCO; integrated transceiver;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location :
Torun
Print_ISBN :
978-8-3635-7806-0
DOI :
10.1109/MIXDES.2015.7208533
