Title :
Development of radiation-hard bandgap reference and temperature sensor in CMOS 130 nm technology
Author :
Kuczynska, Marika ; Gozdur, Sabina ; Bugiel, Szymon ; Firlej, Miroslaw ; Fiutowski, Tomasz ; Idzik, Marek ; Michelis, Stefano ; Moron, Jakub ; Przyborowski, Dominik ; Swientek, Krzysztof
Author_Institution :
AGH Univ. of Sci. & Technol., Cracow, Poland
Abstract :
A stable reference voltage (or current) source is a standard component of today´s microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, which show correct operation (<;1mV bandgap stability, linear PTAT) in teperature range -20 to 100 celsius degree.
Keywords :
CMOS integrated circuits; high electron mobility transistors; integrated circuit layout; radiation hardening (electronics); reference circuits; semiconductor diodes; temperature measurement; temperature sensors; CMOS technology; DTMOS; ELT bulk diode; ELTMOS structure; PTAT; bipolar transistor; current source; dynamic threshold transistor; enclosed layout transistor; ionizing radiation condition; microelectronics system; particle physics experiment; post-layout simulation; proportional to absolute temperature; radiation-hard bandgap reference; radiation-hard diode; reference voltage source; size 130 nm; standard p-n junction; temperature -20 degC to 100 degC; temperature measurement; temperature sensor; CMOS integrated circuits; Layout; Photonic band gap; Standards; Temperature dependence; Temperature sensors; Transistors; DTMOS; ELTMOS; PTAT; bandgap;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location :
Torun
Print_ISBN :
978-8-3635-7806-0
DOI :
10.1109/MIXDES.2015.7208536
