Title :
Recent Advances in Germanium Quantum Well Structures - A New Modulation Mechanism for Silicon-Compatible Optics
Author :
Miller, David A. B.
Author_Institution :
Stanford Univ., Stanford
Abstract :
Silicon technology increasingly can implement both electronics and optics for communications. The recent discovery of strong electroabsorption in Ge quantum wells on silicon may fill a key gap, allowing a merged technology for many applications.
Keywords :
electro-optical modulation; electroabsorption; elemental semiconductors; germanium; optical communication equipment; quantum well devices; semiconductor devices; semiconductor quantum wells; Ge - Interface; electroabsorption; germanium quantum well structures; modulation mechanism; optical communication; Germanium; Optical crosstalk; Optical devices; Optical interconnections; Optical modulation; Photonics; Silicon; Stark effect; Transistors; Wiring;
Conference_Titel :
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location :
Anaheim, CA
Print_ISBN :
1-55752-831-4
DOI :
10.1109/OFC.2007.4348777
