Title :
2D topology-finite-element analysis of a infra-red photodiode under uniform illumination
Author :
Xu Qihua ; Guang, Zhao ; Fubao, Wang
Author_Institution :
Xian Airforce Eng. Coll., China
Abstract :
The profile of the minority carrier concentration in a stripe geometry mesastructure InSb photodiode is computed in this paper using the topology finite element method and Giwens transformation. Accordingly, collected photocurrent characteristic curves are obtained. The paper sets up a base for optimizing the design of these devices
Keywords :
III-V semiconductors; carrier density; finite element analysis; indium antimonide; minority carriers; optimisation; photodiodes; semiconductor device models; 2D; FEM; Giwens transformation; InSb photodiode; design; minority carrier concentration; optimisation; photocurrent characteristic curves; semiconductor device models; stripe geometry mesastructure; topology finite element method; Boundary conditions; Design optimization; Educational institutions; Equations; Geometry; Infrared detectors; Lighting; Military computing; Photoconductivity; Photodiodes;
Conference_Titel :
Industrial Electronics, 1992., Proceedings of the IEEE International Symposium on
Conference_Location :
Xian
Print_ISBN :
0-7803-0042-4
DOI :
10.1109/ISIE.1992.279522
