DocumentCode :
1686568
Title :
Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications
Author :
Massoud, A.M. ; Finney, S.J. ; Williams, B.W.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
Volume :
1
fYear :
2004
Firstpage :
1
Abstract :
In this paper a detailed quantitative comparison between two competing high voltage converter technologies is performed, namely series connection of semiconductor power devices versus multilevel converters. The comparison is based on converter losses (conduction and switching), total harmonic distortion and distortion factor for the output phase arid line voltages, and common mode voltage at different modulation frequency ratios.
Keywords :
PWM invertors; insulated gate bipolar transistors; losses; switching convertors; PWM invertors; common mode voltage; conduction losses; converter losses; distortion factor; line voltage; modulation frequency ratios; multilevel converters; output phase; semiconductor power devices; series connected IGBT; switching losses; total harmonic distortion;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Electronics, Machines and Drives, 2004. (PEMD 2004). Second International Conference on (Conf. Publ. No. 498)
ISSN :
0537-9989
Print_ISBN :
0-86341-383-8
Type :
conf
DOI :
10.1049/cp:20040249
Filename :
1348881
Link To Document :
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