DocumentCode
1686635
Title
Development of an empirical large signal model for SiC MESFETs
Author
Manohar, S. ; Pham, A. ; Evers, N.
Author_Institution
Holcombe Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
fYear
2002
Abstract
We present the development of an empirical nonlinear model for silicon carbide MESFETs. The proposed channel current model is single piece, continuously differentiable and capable of accurately modeling the current-voltage characteristics of SiC MESFETs. The nonlinear model has been implemented in a commercial computer-aided-design (CAD) tool and its validity has been verified against DC I-V curves, S-parameters (up to 8 GHz) and load-pull power measurements.
Keywords
S-parameters; Schottky gate field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; MESFET; S-parameters; SiC; channel current model; computer-aided-design tool; current-voltage characteristics; empirical large signal model; empirical nonlinear model; load-pull power measurements; Electrons; Gallium arsenide; Knee; MESFETs; Nonlinear equations; Power measurement; Research and development; Silicon carbide; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest, Spring 2002. 59th
Conference_Location
Seattle, WA
Print_ISBN
0-7803-7143-7
Type
conf
DOI
10.1109/ARFTGS.2002.1214676
Filename
1214676
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