Title :
Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes
Author_Institution :
Telecommun. Lab., Tech. Res. Centre of Finland, Espoo, Finland
Abstract :
A description is given of the design and performance of GaAs monolithic L-band amplifiers with low power consumption. One amplifier has been fabricated using a 1-μm depletion-mode (D-MESFET) process, and the other using 1-μm enhancement/depletion-mode (E/D) technology. Both the amplifiers have over 11-dB gain and a noise figure of 3 dB or less at 1 GHz. The power consumption of the D-MESFET amplifier is below 100 mW and that of the E/D amplifier is below 50 mW. Overall performance of the amplifiers is compared
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; ultra-high-frequency amplifiers; 1 GHz; 1 micron; 100 mW; 11 dB; 3 dB; 50 mW; GaAs; L-band; MMIC; UHF; depletion-mode; enhancement/depletion-mode; low power consumption; low-noise type; monolithic amplifiers; Broadband amplifiers; Circuit noise; Circuit synthesis; Circuit topology; Energy consumption; Gallium arsenide; Low-noise amplifiers; Noise figure; Power amplifiers; Resistors;
Conference_Titel :
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location :
Portland, OR
DOI :
10.1109/ISCAS.1989.100782
