Title :
Charge Loss Mechanisms in a Localized Trapping Based Nonvolatile Memory Device
Author :
Shur, Yael ; Shacham-Diamand, Yosi ; Lusky, Eli ; Eitan, Boaz ; Shappir, Assaf
Author_Institution :
Dept. of Phys. Electron., Tel Aviv Univ., Ramat Aviv
Abstract :
In this work, quantification of the theories and models attributed to the NROM cell Vt decay and the dominant charge loss mechanism dictating this phenomenon are discussed. The main objective is to determine whether the transport of the localized trapped charge is mainly lateral within the nitride layer or vertical back to the silicon substrate. Electrical characterizations and analytic modeling are employed for comparison of theories.
Keywords :
localised states; random-access storage; read-only storage; NROM technology; Si; charge loss mechanisms; localized charge trapping; nitride layer; nonvolatile memory device; silicon substrate; Dielectrics; Electron traps; FETs; Hot carrier injection; Nonvolatile memory; Silicon; Solid state circuits; Substrates; Temperature; Threshold voltage;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 2006 IEEE 24th Convention of
Conference_Location :
Eilat
Print_ISBN :
1-4244-0229-8
Electronic_ISBN :
1-4244-0230-1
DOI :
10.1109/EEEI.2006.321104
