Design of RCD snubbers based upon approximations to the switching characteristics. I. Theoretical development

Author

Hossain, Zia ; Olejniczak, K.J. ; Burgers, K.C. ; Balda, J.C.

Author_Institution

Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA

fYear

1997

Abstract

New optimal RCD snubber design equations for use with BJT-, GTO-, IGBT- and MCT-based switch-mode power converters are presented which specifically incorporate the transient stress effects due to circuit stray inductance. Based on these optimal design equations, analytical expressions for turn-off energy losses are obtained. The analysis presented in this paper is applicable for any power device; the MCT has been chosen here for demonstration

Keywords

MOS-controlled thyristors; bipolar transistor switches; circuit optimisation; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; residual current devices; snubbers; switched mode power supplies; switching circuits; thyristor convertors; BJT; GTO; IGBT; MCT; RCD snubbers design; circuit stray inductance; optimal design equations; power semiconductor switch protection; switch-mode power converters; switching characteristics; transient stress effects; turn-off energy losses; Capacitance; Capacitors; Circuits; Inductance; Snubbers; Stress; Switches; Switching loss; Tail; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Machines and Drives Conference Record, 1997. IEEE International

Conference_Location

Milwaukee, WI

Print_ISBN

0-7803-3946-0

Type

conf

DOI

10.1109/IEMDC.1997.604205

Filename

604205