DocumentCode :
1688163
Title :
All-semiconductor metamaterial with negative refraction in the near-infrared
Author :
Naik, Gururaj V. ; Liu, Jingjing ; Kildishev, Alexander V. ; Shalaev, Vladimir M. ; Boltasseva, Alexandra
Author_Institution :
Sch. of Electr. & Comput. Eng. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
When heavily doped, semiconductors such as ZnO can exhibit metallic properties thus becoming versatile building blocks for optical metamaterials. Here, we design and fabricate an all-semiconductor metamaterial and demonstrate negative refraction in the near-infrared region.
Keywords :
II-VI semiconductors; heavily doped semiconductors; infrared spectra; metamaterials; refraction; wide band gap semiconductors; zinc compounds; ZnO-ZnO:Al; all-semiconductor metamaterial; heavily doped semiconductors; metallic properties; near-infrared region; negative refraction; optical metamaterials; versatile building blocks; Hidden Markov models; Metamaterials; Optical device fabrication; Optical imaging; Optical refraction; Plasmons; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326965
Link To Document :
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