• DocumentCode
    1689278
  • Title

    Laser cooling of GaN based on anti-Stokes Raman scattering

  • Author

    Ding, Yujie J. ; Khurgin, Jacob B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Based on our recent experimental result, we show that GaN holds promise for achieving laser cooling based on anti-Stokes Raman scattering.
  • Keywords
    III-V semiconductors; Raman spectra; gallium compounds; laser cooling; phonons; wide band gap semiconductors; GaN; anti-Stokes Raman scattering; laser cooling; Cooling; Gallium nitride; Phonons; Pump lasers; Raman scattering; Semiconductor lasers; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6327010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1689278