Title :
Laser cooling of GaN based on anti-Stokes Raman scattering
Author :
Ding, Yujie J. ; Khurgin, Jacob B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Based on our recent experimental result, we show that GaN holds promise for achieving laser cooling based on anti-Stokes Raman scattering.
Keywords :
III-V semiconductors; Raman spectra; gallium compounds; laser cooling; phonons; wide band gap semiconductors; GaN; anti-Stokes Raman scattering; laser cooling; Cooling; Gallium nitride; Phonons; Pump lasers; Raman scattering; Semiconductor lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
