Interconnects Analyses in Quasi-Monolithic Integration Technology (QMIT)

Author

Joodaki, M. ; Kricke, A. ; Hillmer, H. ; Kompa, G.

Author_Institution

Qimonda AG, Munich

fYear

2006

Firstpage

229

Lastpage

232

Abstract

Three dimensional (3D) full-wave electromagnetic simulations are used to investigate high frequency performance of interconnects in quasi-monolithic integration technology (QMIT). The results are calculated for different structures of QMIT, earlier concept and new concept, and compared with those of other assembly technologies such as bond wire, hybrid integration, and flip-chip. The insertion loss (magnitude of S21) of the second type of the earlier concept (EC) and the new concept (NC) of QMIT at 40 GHz are just -0.36 dB and -0.26 dB, respectively. This means that the QMIT interconnects have excellent performances up to millimetre-wave frequency ranges

Keywords

circuit simulation; flip-chip devices; integrated circuit interconnections; lead bonding; millimetre wave integrated circuits; 0.26 dB; 0.36 dB; 3D electromagnetic simulation; 40 GHz; bond wire technology; flip chip technology; high frequency performance; hybrid integration technology; interconnects analysis; quasimonolithic integration technology; Assembly; Bonding; Electromagnetic analysis; Frequency; Packaging; Performance analysis; Silicon; Thermal resistance; Thermal stresses; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 2006 IEEE

Conference_Location

Scottsdale, AZ

Print_ISBN

1-4244-0668-4

Type

conf

DOI

10.1109/EPEP.2006.321236

Filename

4115396