Title :
Interconnects Analyses in Quasi-Monolithic Integration Technology (QMIT)
Author :
Joodaki, M. ; Kricke, A. ; Hillmer, H. ; Kompa, G.
Author_Institution :
Qimonda AG, Munich
Abstract :
Three dimensional (3D) full-wave electromagnetic simulations are used to investigate high frequency performance of interconnects in quasi-monolithic integration technology (QMIT). The results are calculated for different structures of QMIT, earlier concept and new concept, and compared with those of other assembly technologies such as bond wire, hybrid integration, and flip-chip. The insertion loss (magnitude of S21) of the second type of the earlier concept (EC) and the new concept (NC) of QMIT at 40 GHz are just -0.36 dB and -0.26 dB, respectively. This means that the QMIT interconnects have excellent performances up to millimetre-wave frequency ranges
Keywords :
circuit simulation; flip-chip devices; integrated circuit interconnections; lead bonding; millimetre wave integrated circuits; 0.26 dB; 0.36 dB; 3D electromagnetic simulation; 40 GHz; bond wire technology; flip chip technology; high frequency performance; hybrid integration technology; interconnects analysis; quasimonolithic integration technology; Assembly; Bonding; Electromagnetic analysis; Frequency; Packaging; Performance analysis; Silicon; Thermal resistance; Thermal stresses; Wire;
Conference_Titel :
Electrical Performance of Electronic Packaging, 2006 IEEE
Conference_Location :
Scottsdale, AZ
Print_ISBN :
1-4244-0668-4
DOI :
10.1109/EPEP.2006.321236
