DocumentCode
1689770
Title
Manipulating coherent LO phonons and phonon-plasmon coupling in highly doped p-GaAs
Author
Hu, Jianbo ; Misochko, Oleg V. ; Goto, Arihiro ; Nakamura, Kazutaka G.
Author_Institution
Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama, Japan
fYear
2012
Firstpage
1
Lastpage
2
Abstract
Femtosecond laser pulses are employed to coherently control the LO phonon strength and lifetime of LO phonon-plasmon coupled modes in a highly doped p-GaAs. The change in lifetime might be due to Landau damping.
Keywords
III-V semiconductors; damping; gallium arsenide; high-speed optical techniques; phonons; plasmonics; GaAs; LO phonon strength; LO phonon-plasmon coupled mode lifetime; Landau damping; coherent LO phonons; femtosecond laser pulses; highly doped p-GaAs; Charge carrier density; Damping; Frequency modulation; Laser excitation; Phonons; Plasmons; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6327030
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