Title :
Table of contents
Abstract :
The following topics are dealt with: smart power circuit technology; IGBT; diodes; high-voltage MOSFET: CMOS technology; GaN power devices; SiC power devices; packaging technology; process reliability; and low-voltage power devices.
Keywords :
CMOS integrated circuits; III-V semiconductors; electronics packaging; gallium compounds; insulated gate bipolar transistors; low-power electronics; power MOSFET; power semiconductor diodes; reliability; silicon compounds; wide band gap semiconductors; CMOS technology; GaN; IGBT; SiC; diodes; gallium nitride power devices; high-voltage MOSFET; low-voltage power devices; packaging technology; process reliability; silicon carbide power devices; smart power circuit technology;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890772
