Title :
Automotive 130 nm smart-power-technology including embedded flash functionality
Author :
Rudolf, Ralf ; Wagner, Cajetan ; O´Riain, Lincoln ; Gebhardt, Karl-Heinz ; Kuhn-Heinrich, Barbara ; Von Ehrenwall, Birgit ; Von Ehrenwall, Andreas ; Strasser, Marc ; Stecher, Matthias ; Glaser, Ulrich ; Aresu, Stefano ; Kuepper, Paul ; Mayerhofer, Alevtin
Author_Institution :
Infineon Technol. AG, Dresden, Germany
Abstract :
In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with low on-resistances. To ensure the safe operation of the power devices, a superior robustness against high energetic pulses of different length and repetitions could be achieved. The isolation of the different voltage stages is ensured by deep trenches and highly doped buried layers.
Keywords :
BIMOS integrated circuits; flash memories; logic devices; power semiconductor devices; BCD technology platform; analog device; automotive smart-power-technology; embedded flash functionality; flash device; logic device; power device; size 130 nm; Copper; Metallization; Robustness; Semiconductor optical amplifiers; Substrates; Transistors; Voltage measurement;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890780
