Design and optimization of a GaAs-based sub-7-μm quantum cascade laser based on multivalley monte carlo simulation

Author

Gao, X. ; Souza, M.D. ; Botez, D. ; Knezevic, I.

Author_Institution

Univ. of Wisconsin - Madison, Madison

fYear

2007

Firstpage

17

Lastpage

18

Abstract

We present the design and optimization of a deep-well GaAs-based quantum cascade laser (QCL) emitting at 6.7 μm, the shortest wavelength in GaAs-based QCLs, using a multivalley Monte Carlo simulation. The simulation is performed self-consistently with the design process. The optimized structure exhibits sufficient gain to achieve lasing at both 77 K and 300 K. The calculated threshold currents are 5 kA/cm² at 77 K and 14 kA/cm² at 300 K.

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; quantum cascade lasers; GaAs; GaAs - Interface; GaAs-based quantum cascade laser; III-V semiconductors; laser design; laser optimization; multivalley Monte Carlo simulation; temperature 300 K; temperature 77 K; wavelength 6.7 μm; Computational modeling; Current density; Design optimization; Gallium arsenide; Monte Carlo methods; Optical design; Process design; Quantum cascade lasers; Quantum computing; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on

Conference_Location

Newark, DE

Print_ISBN

978-1-4244-1431-4

Type

conf

DOI

10.1109/NUSOD.2007.4349002

Filename

4349002