Wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications

Author

Tomita, Hidemoto ; Eguchi, Hiroomi ; Kijima, Shinya ; Honda, Norihiro ; Yamada, Tetsuya ; Yamawaki, Hideo ; Aoki, Hirofumi ; Hamada, Kimimori

Author_Institution

Electron. Dev. Div. 3, Toyota Motor Corp., Toyota, Japan

fYear

2011

Firstpage

28

Lastpage

31

Abstract

This paper describes a new wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications. This technology is capable of integrating 35V, 60V, and 80V Nch and Pch LDMOS, 35V BJT, and 6V CMOS devices on a single chip. The devices are completely isolated dielectrically using both deep trench isolation (DTI) and a buried oxide (BOX) layer in a silicon-on-insulator (SOI) wafer for stable operation at high temperatures up to 175°C. The devices were developed using a 0.35μm process. In particular, the LDMOS devices have achieved competitive levels of low Ron*A and good SOA.

Keywords

BiCMOS integrated circuits; automotive electronics; silicon-on-insulator; BJT device; CMOS device; LDMOS device; buried oxide layer; deep trench isolation; high-temperature automotive application; silicon-on-insulator wafer; size 0.35 mum; voltage 35 V; voltage 60 V; voltage 80 V; wide-voltage SOI-BiCDMOS technology; Automotive applications; CMOS integrated circuits; Diffusion tensor imaging; Electric variables; Impact ionization; Metals;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890782

Filename

5890782