Title :
A novel 0.16 μm — 300 V SOIBCD for ultrasound medical applications
Author :
Sambi, M. ; Merlini, D. ; Galbiati, P. ; Bonera, E. ; Belletti, F.
Author_Institution :
STMicroelectron. TRD, Agrate Brianza, Italy
Abstract :
The development of a new 0.16 μm SOIBCD technology integrating components with breakdown voltage higher than 300 V is here described. Process integration and mechanical stress due to buried oxide and lateral dielectric isolation was investigated with TCAD simulations, morphological analysis and Raman spectroscopy measurements. Component portfolio was derived from existing junction isolated (JI) 0.16 μm technologies and expanded with high voltage MOS. Stress induced by the full dielectric isolation is far from critical values. Breakdown voltages over 350 V were measured.
Keywords :
CMOS integrated circuits; MOS integrated circuits; biomedical electronics; biomedical ultrasonics; silicon-on-insulator; Raman spectroscopy measurements; SOIBCD technology; TCAD simulations; bipolar-CMOS-DMOS; breakdown voltage; buried oxide; lateral dielectric isolation; mechanical stress; morphological analysis; process integration; ultrasound medical applications; Application specific integrated circuits; Diffusion tensor imaging; Performance evaluation; Silicon; Stress; Stress measurement; Ultrasonic imaging;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890784
