Development of the next generation 1700V trench-gate FS-IGBT

Author

Onozawa, Y. ; Ozaki, D. ; Nakano, H. ; Yamazaki, T. ; Fujishima, N.

Author_Institution

Fuji Electr. Syst. Co., Ltd., Nagano, Japan

fYear

2011

Firstpage

52

Lastpage

55

Abstract

This paper describes the next generation 1700V trench-gate FS-IGBT utilized the micro p-base structure for the first time. The new 1700V IGBT has been achieved that “better turn-on di/dt controllability”, “oscillation free turn-off” and “improved Von-Eoff trade-off relationship” as well as 600V and 1200V IGBTs. Furthermore, the critical thermal runaway temperature has successfully been elevated by the newly developed field-stop layer, which leads to increase of maximum junction temperature as high as 175 deg. C.

Keywords

insulated gate bipolar transistors; Von-Eoff trade-off relationship; better turn-on di/dt controllability; critical thermal runaway temperature; field-stop layer; micro p-base structure; next generation 1700V trench-gate FS-IGBT; oscillation free turn-off; temperature 175 degC; voltage 1700 V; Current measurement; Electric fields; Insulated gate bipolar transistors; Leakage current; Power dissipation; Temperature measurement; Transient analysis; backside avalanche; field-Stop layer optimization; micro p-base structure; thermal runaway;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890788

Filename

5890788