The radial layout design concept for the Bi-mode insulated gate transistor

Author

Storasta, L. ; Rahimo, M. ; Bellini, M. ; Kopta, A. ; Vemulapati, U.R. ; Kaminski, N.

Author_Institution

Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland

fYear

2011

Firstpage

56

Lastpage

59

Abstract

In this paper we present a new radial design concept for an optimized layout of anode shorts in the Bi-mode Insulating Gate Transistor (BiGT). The study shows that the arrangement of the n⁺-stripes plays a key role for the on-state characteristics of the BiGT. With the aid of 3D device simulations the visualization of the plasma distribution during the on-state conduction was obtained in a 0.25 × 4 mm² large BiGT model area. The influence of the dimensioning and layout of the anode shorts was simulated and compared with measured on-state curves. A clear improvement of plasma distribution in the device when the stripes are arranged orthogonally (radially) to the pilot-IGBT boundary is observed in 3D simulations. Measurements confirm lower on-state losses as a result of better utilization of the device area.

Keywords

insulated gate field effect transistors; semiconductor device models; 3D device simulations; Bi-mode insulated gate transistor; anode shorts; n<;sup>;+<;/sup>;-stripes; on-state conduction; plasma distribution; radial layout design concept; stripes; Anodes; Insulated gate bipolar transistors; Layout; Logic gates; Plasmas; Solid modeling; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890789

Filename

5890789