Title :
High speed 650V IGBTs for DC-DC conversion up to 200 kHz
Author :
Chang, Hsueh-Rong ; Bu, Jiankang ; Kong, George ; Bou, Rachana
Author_Institution :
Automotive Power Switches Dev., Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
The increasing demand for higher power density and lower cost in high voltage power supplies has driven semiconductor manufacturers to expand IGBT performance for high switching frequency beyond 100 kHz. An ultra thin punch-through IGBT with a blocking voltage of 650V has been developed and optimized targeting DC-DC conversion up to 200 kHz. Its high Tjmax of 175°C further enhances the converter compactness. This paper describes the feature of this ultra fast IGBT in a critical comparison with equivalent products available on the market today.
Keywords :
DC-DC power convertors; circuit optimisation; insulated gate bipolar transistors; DC-DC conversion; IGBT performance; converter compactness; equivalent products; frequency 100 kHz to 200 kHz; high speed 650V IGBT; high switching frequency; higher power density; semiconductor manufacturers; temperature 175 degC; voltage 650 V; Fabrication; Insulated gate bipolar transistors; MOSFETs; Switches; Switching circuits; Switching frequency; Switching loss; DC-DC converter; IGBT; switching losses; ultra-thin wafer;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890793
