Title :
Curvature correction method based on subthreshold currents for bandgap voltage references
Author :
Colombo, Dalton ; Wirth, Gilson ; Bampi, Sergio ; Nabki, Frederic ; Fayomi, Christian
Author_Institution :
Microelectron. Program (PGMICRO), Fed. Univ. of Rio Grande do Sul (UFRGS), Porto Alegre, Brazil
Abstract :
This work presents a curvature correction method using a subthreshold current generated by an NMOS transistor with its gate and source connected. The designed BGR, used as case study, achieves a simulated temperature coefficient of 5.9 ppm/°C, while the conventional circuit achieves only 17.5 ppm/°C - the triple of the output voltage variation in the temperature range from -40 to 125°C. If the proposed technique is used, the traditional first-order BGR can be simply modified to accomplish high-order temperature compensation with small area overhead and without an increase in power consumption.
Keywords :
MOSFET; compensation; reference circuits; NMOS transistor; bandgap voltage references; curvature correction method; first-order BGR; high-order temperature compensation; output voltage variation; power consumption; simulated temperature coefficient; subthreshold currents; temperature -40 degC to 125 degC; CMOS integrated circuits; Integrated circuit modeling; MOSFETs; Photonic band gap; Resistors; Subthreshold current; Temperature dependence;
Conference_Titel :
Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4673-1207-3
DOI :
10.1109/LASCAS.2012.6180314
