Title :
Two Dimensional Modeling of Interdigitated Back Contact Silicon Heterojunction Solar Cells
Author :
Lu, Meijun ; Bowden, Stuart ; Birkmire, Robert
Author_Institution :
Univ. of Delaware, Newark
Abstract :
Two-dimensional numerical simulations for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have been studied with the software package Sentaurus Device. Distribution of trap states and thermionic emission were considered for amorphous-silicon material and amorphous-silicon/crystalline-silicon hetero-interface, respectively. The 2D distribution and current-voltage curve were generated. It was found that the performance of IBC-SHJ solar cell depends on the front surface recombination velocity and the dimensions of P, N contacts, which is also shown in simulated LBIC line scan. The simulations show that after optimization, an efficiency of 22% can be achieved for IBC-SHJ solar cells.
Keywords :
semiconductor device models; silicon; solar cells; thermionic emission; Sentaurus Device; Si; Si - Interface; amorphous-silicon material; crystalline-silicon hetero-interface; front surface recombination velocity; interdigitated back contact silicon heterojunction; solar cell; thermionic emission; trap state distribution; Amorphous silicon; Charge carrier processes; Heterojunctions; Numerical simulation; Optical scattering; Photovoltaic cells; Poisson equations; Semiconductor process modeling; Solar power generation; Thermionic emission;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location :
Newark, DE
Print_ISBN :
978-1-4244-1431-4
DOI :
10.1109/NUSOD.2007.4349021
