• DocumentCode
    1691644
  • Title

    Two Dimensional Modeling of Interdigitated Back Contact Silicon Heterojunction Solar Cells

  • Author

    Lu, Meijun ; Bowden, Stuart ; Birkmire, Robert

  • Author_Institution
    Univ. of Delaware, Newark
  • fYear
    2007
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    Two-dimensional numerical simulations for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have been studied with the software package Sentaurus Device. Distribution of trap states and thermionic emission were considered for amorphous-silicon material and amorphous-silicon/crystalline-silicon hetero-interface, respectively. The 2D distribution and current-voltage curve were generated. It was found that the performance of IBC-SHJ solar cell depends on the front surface recombination velocity and the dimensions of P, N contacts, which is also shown in simulated LBIC line scan. The simulations show that after optimization, an efficiency of 22% can be achieved for IBC-SHJ solar cells.
  • Keywords
    semiconductor device models; silicon; solar cells; thermionic emission; Sentaurus Device; Si; Si - Interface; amorphous-silicon material; crystalline-silicon hetero-interface; front surface recombination velocity; interdigitated back contact silicon heterojunction; solar cell; thermionic emission; trap state distribution; Amorphous silicon; Charge carrier processes; Heterojunctions; Numerical simulation; Optical scattering; Photovoltaic cells; Poisson equations; Semiconductor process modeling; Solar power generation; Thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
  • Conference_Location
    Newark, DE
  • Print_ISBN
    978-1-4244-1431-4
  • Type

    conf

  • DOI
    10.1109/NUSOD.2007.4349021
  • Filename
    4349021