Evaluation of 1.2kV Super Junction trench-gate clustered insulated gate bipolar transistor (SJ-TCIGBT)

We report, for the first time, results of extensive 2D simulation evaluation of the first MOS controlled thyristor structure employing the Super Junction concept on a 1.2 kV field stop structure. In comparison to a standard device, simultaneous reduction in V_ce(sat) and E_off can be achieved in a Super Junction Trench Clustered Insulated Gate Bipolar Transistor (SJ-TCIGBT). The simulation results show that up to 80% reduction in E_off is possible. Unlike the Super Junction Insulated Gate Bipolar Transistors, there is no significant increase in the saturation current with the anode voltage or the depth of the pillars. SJ-TCIGBT is a highly promising next generation device concept with record-breaking V_ce(sat) - E_off trade-off enhancement to improve converter efficiency.