Title :
MOS technology: trends and challenges in the ULSI era
Author :
Shah, Ashwin ; Yang, Ping
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
This paper reviews the trends in the MOS technology as we approach the turn of the century and addresses the challenges that we face as the devices geometries continue to scale and as the need for lower power dissipation grows, albeit with the demand for increasing device performance
Keywords :
MOS integrated circuits; ULSI; integrated circuit technology; reviews; MOS technology; ULSI; devices geometry scaling; power dissipation reduction; Batteries; CMOS technology; Costs; Electronics industry; MOSFET circuits; Maintenance; Power dissipation; Power system reliability; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500826
