Detailed numerical modeling of a novel infrared single photon detector for λ ≫ 1 μm

Author

Memis, O.G. ; Wu, W. ; Dey, D. ; Katsnelson, A. ; Mohseni, H.

Author_Institution

Northwestern Univ., Evanston

fYear

2007

Firstpage

63

Lastpage

64

Abstract

We have designed a novel avalanche-free single photon detector for IR wavelengths above 1 μm. The detector shows high quantum efficiency and high gain. A detailed finite-element-method based three-dimensional simulation was developed to model and evaluate the nonlinear effects involved in the design.

Keywords

III-V semiconductors; finite element analysis; gallium arsenide; gallium compounds; indium compounds; infrared detectors; optical design techniques; photodetectors; semiconductor device models; InGaAs-GaAsSb-InP; InGaAs-GaAsSb-InP - Interface; avalanche-free infrared single photon detector design; finite-element-method; nonlinear effects; numerical modeling; quantum efficiency; three-dimensional simulation; Electron traps; Indium gallium arsenide; Indium phosphide; Infrared detectors; Ionization; Numerical models; Optical sensors; Optoelectronic and photonic sensors; Signal to noise ratio; Superconducting device noise; finite element method; infrared detector; multiplication factor; single photon detector; type-II;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on

Conference_Location

Newark, DE

Print_ISBN

978-1-4244-1431-4

Type

conf

DOI

10.1109/NUSOD.2007.4349025

Filename

4349025