DocumentCode
1691801
Title
Thermal models for semiconductor device simulation
Author
Palankovski, Vassil ; Selberherr, Siegfried
Author_Institution
Inst. for Microelctron., Tech. Univ. Wien, Austria
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
25
Lastpage
28
Abstract
We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed is functions of the lattice temperature and in the case of semiconductor alloys of the material composition
Keywords
semiconductor device models; specific heat; thermal conductivity; diamond structure; lattice temperature; material composition; self-heating; semiconductor alloy; semiconductor device simulation; specific heat; thermal conductivity; thermal model; zincblende structure; Composite materials; Conducting materials; Equations; Lattices; Semiconductor devices; Semiconductor materials; Silicon germanium; Temperature dependence; Temperature distribution; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location
Berlin
Print_ISBN
0-7803-5795-7
Type
conf
DOI
10.1109/HITEN.1999.827343
Filename
827343
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