Title :
Thermal models for semiconductor device simulation
Author :
Palankovski, Vassil ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelctron., Tech. Univ. Wien, Austria
fDate :
6/21/1905 12:00:00 AM
Abstract :
We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed is functions of the lattice temperature and in the case of semiconductor alloys of the material composition
Keywords :
semiconductor device models; specific heat; thermal conductivity; diamond structure; lattice temperature; material composition; self-heating; semiconductor alloy; semiconductor device simulation; specific heat; thermal conductivity; thermal model; zincblende structure; Composite materials; Conducting materials; Equations; Lattices; Semiconductor devices; Semiconductor materials; Silicon germanium; Temperature dependence; Temperature distribution; Thermal conductivity;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827343
