Title :
A 1-V CMOS front-end for high-speed 1-mm SI-POF links
Author :
Gimeno, C. ; Aldea, C. ; Celma, S. ; Aznar, F.
Author_Institution :
Group of Electron. Design - Aragon Inst. of Eng. Res. (GDE-I3A), Univ. of Zaragoza, Zaragoza, Spain
Abstract :
This paper presents a new CMOS analog front end for short-reach high-speed optical communications that compensates the limited bandwidth of 1-mm SI-POF transmission systems and is suitable for the required large area Si PIN photodetector. The prototype contains a transimpedance amplifier, a continuous-time equalizer, and an output driver. In particular, the proposed front end has been designed using a cost-effective digital 0.18-μm CMOS technology and is fed with only 1 V, targeting gigabit transmission for simple NRZ modulation. Simulation results validate the approach for cost-effective gigabit SI-POF transmission.
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; integrated circuit design; integrated optoelectronics; optical fibre communication; photodetectors; plastics; silicon; CMOS analog front end; PIN photodetector; Si; continuous-time equalizer; cost-effective digital CMOS technology; cost-effective gigabit SI-POF transmission; high-speed SI-POF transmission link system; high-speed step index-plastic optical fiber transmission link system; limited bandwidth compensation; output driver; short-reach high-speed optical communication; simple NRZ modulation; size 0.18 mum; size 1 mm; transimpedance amplifier; voltage 1 V; Bandwidth; CMOS integrated circuits; Equalizers; Gain; Optical fiber communication; Optical fibers; Resistance;
Conference_Titel :
Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4673-1207-3
DOI :
10.1109/LASCAS.2012.6180321
