The Arrhenius relation for electronics in extreme temperature conditions

Author

Manca, J.V. ; Wondrak, W. ; Croes, Kristof ; Ceuninck, W. De ; D´Haeger, V. ; De Schepper, L. ; Tielemans, L.

Author_Institution

Inst. for Mater. Res., Limburgs Univ. Centrum, Diepenbeek, Belgium

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

29

Lastpage

32

Abstract

In the field of high temperature electronics some doubts have been expressed about the validity of the Arrhenius relation. In this paper the in-situ electrical measurement technique is presented to investigate the temperature dependence of failure mechanisms and conduction mechanisms of several material systems in a broad temperature region. Measurement results will be presented showing single-activation energy and multiple-activation energy behaviour of a.o. electrical conduction, degradation of resistances, electromigration and time dependent dielectric breakdown at high temperature conditions

Keywords

failure analysis; high-temperature electronics; Arrhenius relation; electrical conduction; electrical resistance; electromigration; failure mechanism; high temperature electronics; in-situ electrical measurement; multiple-activation energy; single-activation energy; temperature dependence; time dependent dielectric breakdown; Conducting materials; Dielectric materials; Dielectric measurements; Electric variables measurement; Electrical resistance measurement; Energy measurement; Failure analysis; Measurement techniques; Temperature dependence; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics, 1999. HITEN 99. The Third European Conference on

Conference_Location

Berlin

Print_ISBN

0-7803-5795-7

Type

conf

DOI

10.1109/HITEN.1999.827344

Filename

827344