Theory and Modelling of High-Field Carrier Transport in High-Speed Photodetectors

Author

Zakhleniuk, N.A.

Author_Institution

Univ. of Essex, Colchester

fYear

2007

Firstpage

77

Lastpage

78

Abstract

The authors present analytical microscopic theory and numerical simulation of high-field hot-electron effects in highspeed p-i-n and uni-travelling carrier (UTC) photodetectors (PDs), using both the drift-diffusion (DD) and hydrodynamic (HD) models for steady-state and transient regimes. It is shown that the current models of drift mobility in DD transport are not applicable for strongly inhomogeneous systems with built-in fields. A new DD mobility model is suggested. Comparative analysis of DD and HD modeling results is carried out and it is shown that the HD model adequately describes operation of high-speed PDs excited by short sub-picosecond optical pulses.

Keywords

carrier mobility; diffusion; hot carriers; p-i-n photodiodes; photodetectors; analytical microscopic theory; drift mobility; drift-diffusion model; high-field carrier transport; high-field hot-electron effects; high-speed photodetectors; hydrodynamic model; numerical simulation; p-i-n photodetectors; p-i-n photodiode; steady-state regime; subpicosecond optical pulse excitation; transient regime; unitravelling carrier photodetectors; High definition video; Hydrodynamics; Microscopy; Nonuniform electric fields; Numerical simulation; Optical pulses; PIN photodiodes; Photodetectors; Steady-state; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on

Conference_Location

Newark, DE

Print_ISBN

978-1-4244-1431-4

Type

conf

DOI

10.1109/NUSOD.2007.4349032

Filename

4349032