DocumentCode :
1691894
Title :
Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions
Author :
Perpiñà, X. ; Cortés, I. ; Urresti-Ibañez, J. ; Jordà, X. ; Rebollo, J. ; Millán, J.
Author_Institution :
Inst. de Microelectron. de Barcelona IMB-CNM (CSIC), Bellaterra, Spain
fYear :
2011
Firstpage :
112
Lastpage :
115
Abstract :
This work provides a physical insight into the failure of high-voltage IGBT modules for railway traction when an overload current event occurs during a clamped inductive turn-off. The inspection of failed IGBTs in power modules coming from the field reveals burnt-out points in the vicinity of the device edge termination. This physical signature has been also verified by experimental tests. To explore this result, physical TCAD simulations have been carried out considering, for the first time, the electro-thermal mismatch introduced by the edge termination. From simulation and experimental results, a destructive dynamic avalanche phenomenon at the last IGBT cell is identified as responsible for the observed failure.
Keywords :
CAD; insulated gate bipolar transistors; TCAD simulations; clamped inductive turn-off failure; destructive dynamic avalanche phenomenon; device edge termination; edge termination impact; electro-thermal mismatch; high-voltage IGBT modules; power modules; railway traction; Electric breakdown; Electric fields; Insulated gate bipolar transistors; Integrated circuits; Multichip modules; Rail transportation; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1943-653X
Print_ISBN :
978-1-4244-8425-6
Type :
conf
DOI :
10.1109/ISPSD.2011.5890803
Filename :
5890803
Link To Document :
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